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| Reliability Report: Process: Metal: Al / 0.5% Cu / 0.8% Si DS1808 Passivation w/Nov TEOS Oxide-Nitride 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N+ESD,TEOS Spacer, Gate Ox Thickness: Cf: Ea: : 225 A 60% 0.7 0 Summary Data with Chi-Square Distribution Assumed. Stress Ambient Temperature and Voltage to Field Ambient Temperature And Voltage Tuse: Vuse: 25 5.5 C Volts Pin Count: Assembly: Package: Body Size: 16 ATP (Amkor, PI) SOIC 150x1.4 DESCRIPTION HIGH VOLTAGE LIFE VEHICLE DS1808 DS1808 REV DATE CODE A2 A2 0133 0133 CONDITION 125C, 6.0 V (PSA) & +13.2 V (PS 125C, 6.0 V (PSA) & +13.2 V (PS READPOINT 6 336 HOURS HOURS QUANTITY 80 80 FAILS FILE # DEVICE HRS 0 0 452720 24899612 HIGH TEMPERATURE OPERATING LIFE FAILURE RATE DEVICE HRS: MTBF (yrs): 2.54E+07 3158 TOTALS: FITs: 0 36 PRODUCT DS1808 REV A2 DIE SIZE (x) 159 DIE SIZE (y) 80 No. of Transistors 1700 Thursday, May 16, 2002 |
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